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| ARF521 D G APT RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE * Specified 125 Volt, 81MHz Characteristics: * Output Power = 150 Watts. * Gain = 13dB (Class AB) * Efficiency = 50% MAXIMUM RATINGS Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Device Dissipation @ TC = 25C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. S 165V 150W 150MHz The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. * High Voltage Breakdown and Large SOA for Superior Ruggedness. * Industry standard package * Low Vth thermal coefficient All Ratings: TC = 25C unless otherwise specified. ARF521 UNIT Volts Amps Volts Watts C 500 10 30 250 -55 to 175 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(ON) IDSS IGSS g fs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) Drain-Source On-State Resistance 1 MIN TYP MAX UNIT Volts Ohms A nA mhos Volts 500 0.56 8 25 250 100 3 2 3.6 4 (ID(ON) = 5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 15V, ID = 5A) Gate Threshold Voltage (VDS = VGS, ID = 200mA) THERMAL CHARACTERISTICS Symbol RJC RCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT C/W 0.60 0.1 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 050-4930 Rev A 2-2006 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 50V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX ARF521 UNIT 780 125 7 5.1 4.1 12 4.0 900 150 10 10 8 18 7 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 5:1 Test Conditions f = 81MHz Idq = 50mA VDD = 125V MIN TYP MAX UNIT dB % 14 50 15 55 Pout = 150W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. 25 Class AB VDD = 125V 3000 1000 500 CAPACITANCE (pf) Ciss Coss Pout = 150W 20 GAIN (dB) 100 50 Crss 15 10 10 0 50 75 100 125 150 FREQUENCY (MHz) Figure 1, Typical Gain vs. Frequency 25 1 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 30 ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 25 20 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 40 OPERATION HERE LIMITED BY RDS (ON) TJ = -55C 10 5 100us TJ = +25C 15 10 5 1ms 1 .5 10ms 100ms DC 2-2006 050-4930 Rev A TJ = -55C TJ = +125C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area .1 TC =+25C TJ =+175C SINGLE PULSE 1.10 ID, DRAIN CURRENT (AMPERES) 30 25 20 15 10 5 0 8V 7V 12V 11V 10V 9V ARF521 VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.05 1.00 0.95 0.90 -50 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 5, Typical Threshold Voltage vs Temperature -25 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 0.70 0.60 0.50 0.7 0.40 0.30 0.20 0.10 0 0.5 Note: PDM t1 t2 D = 0.9 0.3 0.1 0.05 10-5 10-4 SINGLE PULSE Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 7a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Transient Thermal Impedance RC Model TJ (C) 0.256 Dissipated Power (Watts) 0.00496F 0.0590F 0.635F 0.213 0.131 TC (C) ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. Figure 7b, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27 40 65 80 100 Zin () 24 - j 4.5 8.3 - j 11.6 2.5 - j 7.1 1.0 - j 4.2 .30 - j 1.1 .25 + j 0.3 .35 + j 1.6 ZOL () 55 - j 4 45 - j 22 28.7 - j 28 17.9 - j 26 9.0 - j 20.6 5.8 - j 17 4 - j 14.2 ZEXT Idq = 50mA Zin - Gate shunted with 25 ZOL - Conjugate of optimum load for 150 Watts output at Vdd = 125V 050-4930 Rev A 2-2006 ARF521 ARF521 Test Circuit 81.36 MHz C12 R1 C8 C2 L1 TL1 DUT C1 C3 C4 C5 R2 L3 R3 L2 C6 C7 C9 L4 +125V C10 C11 RF Output C1 - Arco 406 Mica trimmer C2 - 220pF Semco metal clad C3 - Arco 464 Mica trimmer C4 - 820pF ATC 700B C5- 1000pF ATC 700B C6 - Arco 463 Mica trimmer C7-C10 10nF 500V chip C11-C13 1nF NPO 500V TL1 - .23" x 1.5" stripline L1 -- 2t #18 .3" ID .2"L ~50nH L2 -- 3t #16 AWG .31" ID .3"L ~65nH L3 -- 10t #22 AWG .25 ID ~470nH L4 -- VK200-4B ferrite choke ~3uH R1-R3 -- 1k Ohm 1/4W Carbon DUT = ARF521 Vdd Power Bias 0 - 12V RF Input C13 Gate Bias ARF521 Test Fixture 2-22-02 rf Hazardous Material Warning The ceramic portion of the device between the leads and the mounting flange is beryllium oxide, BeO. BeO dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices should never be thrown away with general industrial or domestic waste. .5" SOE Package Outine A U M Q 1 4 2. CONTROLLING DIMENSION: INCH. M R B PIN 1. 2. 3. 4. SOURCE GATE SOURCE DRAIN 2 3 D 2-2006 K J H E C Seating Plane DIM A B C D E H J K M Q R U INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 45 NOM 0.115 0.130 0.246 0.255 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.0 45 NOM 2.93 3.30 6.25 6.47 18.29 18.54 050-4930 Rev A APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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